Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions

Impurity states in semiconductors, in which two long-lived ground states can be optically coupled to a single excited state, provide a powerful mechanism for applications including lasing without inversion, electromagnetically induced transparency, and optically addressable quantum memory for quantum information processing. We report low-threshold lasing from fluorine-doped ZnMgSe/ZnSe quantum wells in microdisk cavities. The lasing mechanismwas studied by power-dependent photoluminescence spectroscopy. Lasing thresholds lower than 50Wcm 2 were observed and the fraction of spontaneous emission contributed to the lasing modes was about b 1⁄4 0.03–0.1. & 2008 Elsevier Ltd. All rights reserved.